MSN0603 60v(d-s) n-channel enhancement mode power mos fet general features v ds =60v,i d =3a r ds(on) <105m ? @ v gs =10v r ds(on) < 125m ? @ v gs =4.5v high power and current handing capability lead free product is acquired surface mount package application battery switch dc/dc converter d g s schematic diagram marking and pin assignment package marking and ordering information device marking device device package reel size tape width quantity MSN0603 sot-23 ?180mm 8 mm 3000 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v drain current-continuous i d 3 a drain current-pulsed (note 1) i dm 10 a maximum power dissipation p d 1.7 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 73.5 /w pin configuration lead free more semiconductor company limited http://www.moresemi.com 1/6 sot-23 top view
gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.8 1.1 1.4 v v gs =10v, i d =3a - 78 105 m ? drain-source on-state resistance r ds(on) v gs =4.5v, i d =3a - 95 125 m ? forward transconductance g fs v ds =15v,i d =2a 3 - - s dynamic characteristics (note4) input capacitance c lss - 247 - pf output capacitance c oss - 34 - pf reverse transfer capacitance c rss v ds =30v,v gs =0v, f=1.0mhz - 19.5 - pf switching characteristics (note 4) turn-on delay time t d(on) - 6 - ns turn-on rise time t r - 15 - ns turn-off delay time t d(off) - 15 - ns turn-off fall time t f v dd =30v,i d =1.5a v gs =10v,r gen =1 ? - 10 - ns total gate charge q g - 6 - nc gate-source charge q gs - 1 - nc gate-drain charge q gd v ds =30v,i d =3a, v gs =4.5v - 1.3 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =3a - - 1.2 v diode forward current (note 2) i s - - 3 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2 . % 4. guaranteed by design, not subject to production electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 60 65 - v zero gate voltage drain current i dss v ds =60v,v gs =0v - - 1 a more semiconductor company limited http://www.moresemi.com 2/6 MSN0603
typical electrical and thermal characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit t j -junction temperature( ) figure 3 power dissipation vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms t j -junction temperature( ) figure 4 drain current i d - drain current (a) figure 6 drain-source on-resistance p d power(w) i d - drain current (a rdson on-resistance(m ) i d - drain current (a) more semiconductor company limited http://www.moresemi.com 3/6 MSN0603
vgs gate-source voltage (v) figure 7 transfer characteristics vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge t j -junction temperature( ) figure 8 drain-source on-resistance vds drain-source voltage (v) figure 10 capacitance vs vds vsd source-drain voltage (v) figure 12 source- drain diode forward i d - drain current (a) rdson on-resistance(m ) vgs gate-source voltage (v) normalized on-resistance c capacitance (pf) i s - reverse drain current (a) more semiconductor company limited http://www.moresemi.com 4/6 MSN0603
vds drain-source voltage (v) figure 13 safe operation area square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance i d - drain current (a) more semiconductor company limited http://www.moresemi.com 5/6 MSN0603
more semiconductor company limited http://www.moresemi.com 6/6 sot-23 package information notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. dimensions in millimeters symbol min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8 MSN0603
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